CVD Pyrolytic Boron Nitride (PBN) for Compound Semiconductor Manufacturing

Gallium arsenide crystal growth in Pyrolytic Boron Nitride crucibles ensures the purity of your final material. Whether you use a Liquid Encapsulated Czochralski (LEC), Vertical Gradient Freeze (VGF), or Bridgman method to grow your crystals, the anisotropic thermal conductivity of PBN improves process performance.

Molecular Beam Epitaxy (MBE) crucibles and other related parts in PBN perform under the high vacuum and high temperatures required for this process. The high purity and physical stability of this unique material also make it ideal for use as auxiliary effusion cell hardware.

PBN coated graphite heating elements provide extremely uniform temperature profiles for both compound and silicon semiconductor manufacturing.

CVD Silicon Carbide (SiC) for Silicon Wafer Processing

Plasma etch processes, especially oxide etch, benefit from the high purity and etch resistance of CVD silicon carbide. Parts made of CVD silicon carbide last longer than those made of other materials, reducing warranty costs. End-users will appreciate that the high purity of CVD silicon carbide reduces the risk of contamination. Our recently developed low resistance CVD silicon carbide is electrically conductive and offers the same benefits of our standard grade of silcon carbide without sacrificing purity. Low resistivity silicon carbide is 99.9999% pure and has a bulk resistivity of 0.012ohm-cm. ideal for RF coupling in the chamber.

Single-wafer epitaxy processes benefit from the purity, corrosion resistance, and thermal properties of CVD SiC. Thermal shock resistance and stiffness maintain flatness even through extreme temperature cycling. Excellent thermal conductivity combines with the ultimate flat chuck to ensure uniform wafer heating.

RTP and single-wafer CVD processes also benefit from CVD SiC’s thermal shock resistance, ability to maintain flatness, and excellent thermal conductivity. Plasma processes may incorporate low resistance silicon carbide for susceptors, electrodes, or coupling components. CVD SiC can also be used for processing chambers and liners.

CVD Silicon Carbide has been used for focus rings in lithography tools; and for slip rings, and lift pins in many types of tools including wet and dry clean tools and ion implanters.

With low resistance CVD silicon carbide semiconductor manufacturers and equipment suppliers now have a material that can not only withstand the harsh environment of semiconductor processing but, also has the added benefit of being electrically conductive. Performance Material's low resistivity silicon carbide has very consistent properties and is ideal for susceptors, processing chambers, gas distribution plates, edge rings and RF coupling in the chamber. Low resistance silicon carbide heaters are used in process chambers where there are requirements for rapid heating to elevated temperatures, low contamination and increased cycles. Low resistivity CVD silicon carbide is perfect for any application that requires electrical conductivity, wear resistance, and thermal shock resistance.